Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Simulation of Intrinsic Parameter Fluctuations in Decananometer and Nanometer-Scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuation...

Intrinsic Parameter Fluctuations in Decananometer MOSFETs Introduced by Gate Line Edge Roughness

In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation exper...

Intrinsic Parameter Fluctuations in Scaled MOSFETs

Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

Variability in device characteristics will affect the scaling and integration of next generation nano-CMOS transistors. Intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness and oxide thickness fluctuations are among the most important sources of variability. In this paper the variability introduced by the above sources is studied in a set of well scaled MO...

RTS Amplitudes in Decananometer MOSFETs: 3-D Simulation Study

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO2 interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) “atomistic” simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dep...